Understanding Power Semiconductor Parameters — Aigoodele Thyristor & Rectifier Guide
Industrial SCR and Thyristor Module for Power Control Applications

1️⃣ Current Parameters Overview

Current ratings define the operational limits and capabilities of our devices. Average current values specify continuous operational limits under defined thermal conditions, while peak and surge ratings indicate maximum transient current handling capability. Gate characteristics determine thyristor triggering requirements and maintaining conditions.

Symbol Parameter Description Related Product Series
IF(AV) Average forward current Continuous current through a diode or rectifier under defined thermal conditions. Bridge Rectifiers
IT(AV) Average on-state current Continuous current through a thyristor during conduction. Three-Phase SCR
IFM / ITM Peak collector / on-state current Maximum current the device can withstand for short durations (non-repetitive). Same as above
IFSM / ITSM Surge forward / on-state current Non-repetitive surge current rating for short pulses. High Power Modules
IG / IGT / IH Gate current / trigger / holding Defines thyristor gate drive requirements. SCR Modules
IRRM Repetitive peak reverse current Maximum reverse leakage in blocking state. Bridge Rectifiers

2️⃣ Voltage Characteristics

Voltage parameters establish the electrical boundaries for device operation. Repetitive peak ratings define maximum allowable reverse bias voltages. Forward voltage drops determine conduction losses and thermal requirements. Gate voltages specify trigger thresholds, and insulation voltage ensures safety compliance.

Symbol Parameter Description Related Product Series
VRRM / VDRM Repetitive peak voltage / Off-state voltage Maximum voltages the device can withstand repeatedly. Bridge Rectifiers / Phase Control Thyristors
VF / VFM / VT / VTM Forward / On-state voltage (peak) Voltage drop during conduction. All SCR / Rectifier Modules
VGT / VGD Gate trigger / un-trigger voltage Threshold voltages to turn ON/OFF SCR. SCR Modules
Viso Insulation voltage Ensures electrical isolation compliance. All Modules

3️⃣ Dynamic Performance Metrics

Switching characteristics critically impact device behavior in operational circuits. Recovery parameters characterize switching losses and reverse recovery behavior. Rate parameters define critical transition capabilities for reliable operation. Turn-off time specifies thyristor commutation characteristics.

Symbol Parameter Description Related Product Series
trr Reverse recovery time Time for diode to recover after reverse voltage. Fast Recovery Diodes
Qrr Recovered charge Charge released during reverse recovery. Fast Recovery Diodes
di/dt / dv/dt Rate of rise of current / voltage Specifies critical transition limits for reliable operation. SCR Modules
tq Turn-off time Time required for thyristor to turn off. SCR Modules

4️⃣ Thermal Management Parameters

Thermal specifications govern device power handling capabilities. Proper thermal management ensures device reliability and longevity. Thermal resistance values define heat transfer paths, and temperature ratings establish operational and storage limits.

Symbol Parameter Description Related Product Series
Rth(j-c) / Rth(j-hs) / Rth(c-hs) / Rth(hs-a) Thermal resistance Heat transfer from junction to case, heatsink, and ambient. All Modules / SCR / Rectifiers
Zth Transient thermal impedance Short-term pulse power response. High Power Modules
Tj / Tjm / Tc / THS / Ta Temperature ratings Operational, maximum junction, case, heatsink, and ambient limits. All Modules

5️⃣ Application Considerations

When selecting components, consider both static and dynamic parameter requirements. Ensure adequate margin between application requirements and device ratings. Thermal design must account for worst-case operating conditions. Gate drive circuits must meet or exceed trigger requirements for reliable thyristor operation. Always consult complete datasheets for detailed specification limits and application conditions.

For technical support or product selection assistance, please contact our engineering team or browse our full range of Power Semiconductor Modules.

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